Optical and electrical properties of in situ-annealed p-type Hg0.7Cd0.3Te epilayers grown on CdTe buffer layers for applications as infrared detectors

Applied Physics Letters

Volumn 83, Issue 18, 2003, Pages 3776-3778

  Ryu, Y S ^a   Heo, Y B ^a   Song, B S ^a   Yoon, S J ^a   Kim, Y J ^a   Kang, T W ^a   Kim, T W ^b  

^a Dongguk University   (South Korea)

^b Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC PROPERTIES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

HALL EFFECT MEASUREMENT; MERCURY CADMIUM TELLURIDE; PHOTORESPONSE MEASUREMENT;

SEMICONDUCTING FILMS;

EID: 0344928490     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1621732     Document Type: Article

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