Theory of optical properties of segregated InAs/GaSb superlattices

IEE Proceedings: Optoelectronics

Volumn 150, Issue 4, 2003, Pages 409-414

  Magri, R ^a   Zunger, A ^b  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRONIC PROPERTIES; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

GALLIUM ANTIMONY SUPERLATTICE; INDIUM ARSENIDE SUPERLATTICE; INTERFACIAL ATOMIC SEGREGATION;

SEMICONDUCTOR SUPERLATTICES;

EID: 0344897239     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:20030843     Document Type: Article

References (30)

1. Meyer, J.R., Olafsen, L.J., Aifer, E.H., Bewley, W.W., Felix, C.L., Vurgaftmant, I., Yang, M.J., Goldberg, L., Zhang, D., Lin, C.H., Pei, S.S., and Chow, D.H.: 'Type II W, interband cascade and vertical-cavity surface-emitting mid-IR lasers', IEE Proc., Optoelectron., 1998, 145, p. 275
2. Steinshnider, J., Weimer, M., Kaspi, R., and Turner, G.W.: 'Visualizing interfacial structure at non-common-atom heterojunctions with cross-sectional scanning tunneling microscopy', Phys. Rev. Lett., 2000, 85, p. 2953
3. Steinshnider, J., Harper, J., Weimer, M., Lin, C.H., Pei, S.S., and Chow, D.H.: 'Origin of antimony segregation in GaInSb/InAs strained-layer superlattices', Phys. Rev. Lett., 2000, 85, p. 4562
4. Yang, M.J., Moore, W.J., Bennet, B.R., and Shanabrook, B.V.: 'Growth and characterisation of InAs/InGaSb/InAs/AlSb infrared laser structures', Electron. Lett., 1998, 34, p. 270
5. Yang, M.J., Moore, W.J., Bennet, B.R., Shanabrook, B.V., Cross, J.O., Bewley, W.W., Felix, C.L., Vurgaftman, I., and Meyer, J.R.: 'Optimum growth parameters for type-II infrared lasers', J. Appl. Phys., 1999, 86, p. 1796
6. Vurgaftman, I., Meyer, J.R., and Ram-Mohan, L.R.: 'Brand parameters for III-V compound semiconductors and their alloys', J. Appl. Phys., 2001, 89, p. 5815
7. Benneth, B.R., Shanabrook, B.V., Wagner, R.J., Davis, J.L., Waterman, J.R., and Twigg, M.E.: 'Interface composition control in InAs/GaSb superlattices', Solid-State Electron., 1994, 37, p. 733
8. Zunger, A.: 'On the farsightedness (Hyperopia) of the standard, k · p model', Phys. Statis Solidi A, 2002, 190, p. 467
9. Krebs, O., and Voisin, P.: 'Giant optical anisotropy of semiconductor heterostructures with no common atom and the quantum-confined Pockels effect', Phys. Rev. Lett., 1996, 77, p. 1829
10. Krebs, O., Rondi, D., Gentner, J.L., Goldstein, L., and Voisin, P.: 'Inversion asymmetry in heterostructures of zinc-blende semiconductors: interface and external potential versus bulk effects', Phys. Rev. Lett., 1998, 80, p. 5770
11. Dente, G.C., and Tilton, M.L.: 'Pseudopotential methods for superlattices: Applications to mid-infrared semiconductor lasers', J. Appl. Phys., 1999, 86, p. 1420
12. Dente, G.C., and Tilton, M.L.: 'Comparing pseudopotential predictions for InAs/GaSb superlattices', Phys. Rev. B, 2002, 66, p. 165307
13. Mader, K.A., and Zunger, A.: 'Empirical atomic pseudopotentials for AlAs/GaAs superlattices, alloys, and nanostructures', Phys. Rev. B, 1994, 50, p. 17393
14. Wood, D.M., and Zunger, A.: 'Successes and failures of the k · p method: a direct assessment for GaAs/AlAs quantum structures', Phys. Rev. B, 1996, 53, p. 7949
15. Wang, L.W., and Zunger, A.: 'Local-density-derived semiempirical pseudopotentials', Phys. Rev. B, 1995, 51, p. 17398
16. Magri, R., and Zunger, A.: 'Effects of interfacial atomic segregation and intermixing on the electronic properties of InAs/GaSb superlattices', Phys. Rev. B, 2002, 65, p. 165302
17. Perdew, J.P., and Zunger, A.: 'Self-interaction correction to density-functional approximations for many-electron systems', Phys. Rev. B, 1981, 23, p. 5048
18. Madelung, O. (Ed.): 'Semiconductors: Group IV and III-V compounds' (Springer, Berlin, 1982), Landolt-Börnstein New Series, Group III, vol. 17
19. Madelung, O. (Ed.): 'Semiconductors: intrinsic properties of Group IV elements and III-V, II-VI, and I-VII compounds' (Springer, Berlin, 1987), Landolt-Börnstein New Series, Group III, vol. 22
20. Wei, S.-H., and Zunger, A.: Calculated natural band offsets of all II-VI and III-V semiconductors: Chemical trends and the role of cation d orbitals', Appl. Phys. Lett., 1998, 72, p. 2011
21. Magri, R., Wang, L.L., Zunger, A., Vurgaftman, I., and Meyer, J.R.: 'Anticrossing semiconducting band gap in nominally semimetallic InAs/GaSb superlattices', Phys. Rev. B 2000, 61, p. 10235
22. Cohen, M., and Heine, V.: in Ehrenreich, H., Seitz, F., and Turbull, D. (Eds.): 'Solid state physics' (Academic Press, New York, 1970), vol. 24, p. 64
23. Keating, P.N.: 'Effect of Invariance requirements on the Elastic Strain Energy of Crystals with Applications to the Diamond Structure', Phys. Rev., 1966, 145, p. 637
24. Wang, L.W., and Zunger, A.: 'Solving Schrodinger's equation around a desired energy: application to silicon quantum dots', J. Chem. Phys., 1994, 100, p. 2394
25. Magri, R., and Zunger, A.: 'Effects of interfacial atomic segregation on optical properties of InAs/GaSb superlattices', Phys. Rev. B, 2001, 64, p. 081305
26. Dehaese, O., Wallart, X., and Mollot, F.: 'Kinetic model of element III segregation during molecular beam epitaxy of III-III'-V semiconductor compounds', Appl. Phys. Lett. 1995, 66, p. 52
27. Wiemer, M., private communication
28. Kaspi, R., Moeller, C., Ongstad, A., Tilton, M.L., Gianardi, D., Dente, G., and Gopaladasu, P.: 'Absorbance spectroscopy and identification of valence subband transitions in type-II InAs/GaSb superlattices', Appl. Phys. Lett., 2000, 76, p. 409
29. Ongstad, A.P., Kaspi, R., Moeller, C.E., Tilton, M.L., Gianardi, D.M., Chavez, J.R., and Dente, G.C.: 'Spectral blueshift and improved luminescent properties with increasing GaSb layer thickness in InAsGaSb type-II superlattices', J. Appl. Phys., 2001, 89, p. 2185
30. Lau, W.H., and Flatte, M.E.: 'Effect of interface structure on the optical properties of InAs/GaSb laser active regions', Appl. Phys. Lett., 2002, 80, p. 1683