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Volumn 80, Issue 26, 1998, Pages 5770-5773
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Inversion asymmetry in heterostructures of zinc-blende semiconductors: Interface and external potential versus bulk effects
a b c c a |
Author keywords
[No Author keywords available]
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Indexed keywords
ANISOTROPY;
ELECTRIC FIELD EFFECTS;
INTERFACES (MATERIALS);
LIGHT ABSORPTION;
LIGHT POLARIZATION;
LUMINESCENCE;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
MOLECULAR STRUCTURE;
PHOTONS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTOR QUANTUM WELLS;
ELECTROPLEOCHROISM;
ENVELOPE FUNCTION THEORY;
INVERSION ASYMMETRY;
PHOTON ENERGY;
QUANTUM CONFINED STARK EFFECT;
HETEROJUNCTIONS;
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EID: 0032577833
PISSN: 00319007
EISSN: 10797114
Source Type: Journal
DOI: 10.1103/PhysRevLett.80.5770 Document Type: Article |
Times cited : (83)
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References (18)
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