80 nm gate-length Si/Si0.7Ge0.3 n-MODFET with 194 GHz fmax

Electronics Letters

Volumn 39, Issue 23, 2003, Pages 1684-1685

  Koester, S J ^a   Saenger, K L ^a   Chu, J O ^a   Ouyang, Q C ^a   Ott, J A ^a   Rooks, M J ^a   Canaperi, D F ^a   Tornello, J A ^a   Jahnes, C V ^a   Steen, S E ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SILICON WAFERS;

MODULATION DOPED FIELD EFFECT TRANSISTOR; ULTRA HIGH VACCUM CHEMICAL VAPOR DEPOSITION;

GATES (TRANSISTOR);

EID: 0344549825     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20031082     Document Type: Article

References (8)

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