90 GHz fT SiGe HFET with fully optical self-aligned sub 100 nm gate

Device Research Conference - Conference Digest, DRC

Volumn 2002-January, Issue , 2002, Pages 53-54

  Zeuner, M ^a   Fox, A ^b   Hackbarth, T ^a   Behammer, D ^c   Konig U ^a  

^a DAIMLER AG   (Germany)

^b IHP   (Germany)

^c United Monolithic Semiconductors GmbH   (Germany)

Author keywords

Current measurement; Frequency measurement; Gain measurement; Germanium silicon alloys; HEMTs; Length measurement; MODFETs; Scattering parameters; Silicon germanium; Solid state circuits

Indexed keywords

BICMOS TECHNOLOGY; ELECTRIC CURRENT MEASUREMENT; GAIN MEASUREMENT; GATES (TRANSISTOR); GERMANIUM; GERMANIUM ALLOYS; HIGH ELECTRON MOBILITY TRANSISTORS; MODFETS; SCATTERING PARAMETERS; SILICON ALLOYS;

FREQUENCY MEASUREMENTS; GERMANIUM SILICON ALLOY; LENGTH MEASUREMENT; SILICON GERMANIUM; SOLID-STATE CIRCUITS;

FIELD EFFECT TRANSISTORS;

EID: 84948682191     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2002.1029506     Document Type: Conference Paper

References (4)

1. König, U., "200 GHz Potential of Si-Based Devices", Solid State Phenomena, vols. 69-70, 1999, pp. 121-130
2. Enciso, M., Aniel, F., Crozat, P., Giguerre, L., Adde, R., Zeuner, M., Höck, G., Fox, A., "Ultra-low noise strained Si/SiGe n- and Ge/SiGe p-MODFETs", ESSDERC, Nürnberg, Sep. 2001
3. T n-MODFETs fabricated on Si/SiGe heterostructures grown by UHV-CVD", Electronics Letters, vol. 35, no. 1, Jan. 1999
4. 0.4 n-MODFET", ISDRS 2001, Washington, Dec. 2001