Surface free technology by laser annealing (SUFTLA)

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 289-292

  Shimoda, Tatsuya ^a   Inoue, Satoshi ^a  

^a SEIKO EPSON CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; EXCIMER LASERS; GLASS; LASER APPLICATIONS; LOW TEMPERATURE OPERATIONS; POLYIMIDES; QUARTZ; SILANES; SUBSTRATES;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION; SURFACE FREE TECHNOLOGY BY LASER ANNEALING;

THIN FILM TRANSISTORS;

EID: 0033343944     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1999.824153     Document Type: Conference Paper

References (4)