Structural properties of GaN grown on SiC substrates by hydride vapor phase epitaxy

Diamond and Related Materials

Volumn 6, Issue 10, 1997, Pages 1532-1535

  Melnik, Yu V ^a   Nikitina, I P ^a   Nikolaev, A E ^a   Dmitriev, V A ^a,b  

^a IOFFE INSTITUTE   (Russian Federation)

^b HOWARD UNIVERSITY   (United States)

Author keywords

Epitaxy; Gallium nitrides; Structural properties; Substrates

Indexed keywords

EID: 0040189083     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(97)00114-3     Document Type: Article

References (7)

1. I.P. Nikitina, V.A. Dmitriev, Inst. Phys. Conf. Series 141 (1994) 431-436.
2. M.E. Lin, B. Swerdlov, G.L. Zhou, H. Morcoc, Appl. Phys. Lett. 62 (1993) 3479-3481.
3. Yu.V. Melnik, I.P. Nikitina, A.S. Zubrilov, A.A. Sitnikova, V.A. Dmitriev, Inst. Phys. Conf. Series 142 (1996) 863-866.
4. S. Sinharoy, G. Augustine, L.B. Rowland, A.K. Agarwal, R.L. Messham, M.C. Driver, R.H. Hopkins, J. Vac. Sci. Technol. A 14 (3) (1996) 896-899.
5. T. Sasaki, T. Matsuoka, J. Appl. Phys. 64 (9) (1988) 4531-4535.
6. I.P. Nikitina, M.P. Sheglov, Yu.V. Melnik, K.G. Irvine, V.A. Dmitriev, Diamond Relat. Mater. (this issue)
7. M. Leszczynski, T. Suski, H. Teisseyre, P. Perlin, I. Grzegory, J. Jun, S. Porowski, T.D. Moustakas, J. Appl. Phys. 76 (8) (1994) 4909-4911.