Dielectric and electromechanical properties of Pb(Zr,Ti)O3 thin films for piezo-microelectromechanical system devices

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 9 B, 2003, Pages 5952-5955

  Kim, Seung Hyun ^a   Yang, Jeong Suong ^a,b   Koo, Chang Young ^a   Yeom, Jung Hoon ^a   Yoon, Euijoon ^b   Hwang, Cheol Seong ^b   Park, Joon Shik ^c   Kang, Sung Goon ^d   Kim, Dong Joo ^e   Ha, Jowoong ^a  

^a INOSTEK Inc   (South Korea)

^b Seoul National University   (South Korea)

^c Korea Electronic Technology Institute (KETI)   (South Korea)

^d Hanyang University   (South Korea)

^e ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

Dielectric and electromechanical properties; Double beam laser interferometer; MEMS; PZT; Thin films

Indexed keywords

CERAMIC MATERIALS; COMPOSITION; ELECTRIC POTENTIAL; HYSTERESIS; INTERFEROMETRY; MICROELECTROMECHANICAL DEVICES; PERMITTIVITY; PIEZOELECTRICITY; POLARIZATION; PULSED LASER DEPOSITION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING LEAD COMPOUNDS;

DOUBLE-BEAM LASER INTERFEROMETRIC METHOD; ELECTROMECHANICAL PROPERTIES; LEAD ZIRCONIUM TITANATE; MORPHOTROPIC PHASE BOUNDARY; PIEZO-MICROELECTROMECHANICAL DEVICE; POLARIZATION HYSTERESIS LOOP;

THIN FILMS;

EID: 0344309165     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.5952     Document Type: Article

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