Optical characteristics of self-assembled InAs quantum dots with InGaAs grown by a molecular beam epitaxy

Journal of Crystal Growth

Volumn 261, Issue 1, 2004, Pages 38-43

  Kim, Jin Soo ^a   Oh, Dae Kon ^a   Yu, Phil Won ^b   Leem, Jae Young ^c   Lee, Joo In ^d   Lee, Cheul Ro ^e  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b WRIGHT STATE UNIVERSITY   (United States)

^c Inje University   (South Korea)

^d Korea Research Institute of Standards and Science   (South Korea)

^e Chonbuk National University   (South Korea)

Author keywords

A1. Energy level control; A1. Strained reducing layer; A3. Quantum dots

Indexed keywords

ACTIVATION ENERGY; CRYSTAL GROWTH; DOPING (ADDITIVES); GROUND STATE; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; OPTICAL FIBERS; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; THERMAL EXPANSION;

EXCITED STATES; PEAK ENERGY; STRAINED REDUCING LAYERS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0344308272     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.09.017     Document Type: Article

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