The energy level spacing between the ground and first excited states in InAs/GaAs quantum dots as a measure of the zero dimensionality

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 17, Issue 1-4, 2003, Pages 129-130

  Lee, U H ^a,b   Jang, Y D ^a   Lee, H ^a   Lee, D ^a   Kim, J S ^c,d   Leem, J Y ^c   Noh, S K ^c  

^a Chungnam National University   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c Korea Research Institute of Standards and Science   (South Korea)

^d Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Energy level spacing; Photoluminescence; Quantum dot; Zero dimensionality

Indexed keywords

ELECTRON ENERGY LEVELS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

ENERGY LEVEL SPACING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037393179     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00746-4     Document Type: Conference Paper

References (3)

1. Arakawa Y., Sakaki H. Appl. Phys. Lett. 40:1982;939.
2. Bimberg D., Grundmann M., Ledentsov N. Quantum Dot Heterostructures. 1999;Wiley, Chichester.
3. Greene R.L., Bajaj K.K., Phelps D.E. Phys. Rev. B. 29:1984;1807.