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Volumn 41, Issue 10 B, 2002, Pages

Photoluminescence properties of nanocrystalline Si dots fabricated by RF plasma-enhanced chemical vapor deposition of SiCl4 and H2 mixture

Author keywords

Ellipsometry; FTIR ATR; PE CVD; Photoluminescence; Si dot; SiCl4

Indexed keywords

ABSORPTION SPECTROSCOPY; ATOMIC FORCE MICROSCOPY; ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN; OXIDATION; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SILICON COMPOUNDS; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0037110210     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l1161     Document Type: Article
Times cited : (4)

References (16)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.