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Volumn 41, Issue 10 B, 2002, Pages
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Photoluminescence properties of nanocrystalline Si dots fabricated by RF plasma-enhanced chemical vapor deposition of SiCl4 and H2 mixture
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Author keywords
Ellipsometry; FTIR ATR; PE CVD; Photoluminescence; Si dot; SiCl4
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Indexed keywords
ABSORPTION SPECTROSCOPY;
ATOMIC FORCE MICROSCOPY;
ELLIPSOMETRY;
FOURIER TRANSFORM INFRARED SPECTROSCOPY;
HYDROGEN;
OXIDATION;
PHOTOLUMINESCENCE;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
SILICON;
SILICON COMPOUNDS;
TEMPERATURE;
TRANSMISSION ELECTRON MICROSCOPY;
ATTENUATED TOTAL REFLECTION ABSORPTION SPECTROSCOPY;
SILICON ETRACHLORIDE;
NANOSTRUCTURED MATERIALS;
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EID: 0037110210
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.41.l1161 Document Type: Article |
Times cited : (4)
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References (16)
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