Direct formation of crystalline silicon films on an amorphous substrate from chlorinated materials by plasma-enhanced chemical vapor deposition

Journal of Non-Crystalline Solids

Volumn 299-302, Issue , 2002, Pages 118-122

  Shirai, Hajime ^a   Jung, Sughoan ^a   Fujimura, Yukihiro ^a   Toyoshima, Yasutake ^b  

^a SAITAMA UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CRYSTAL STRUCTURE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GRAIN GROWTH; LOW TEMPERATURE EFFECTS; NUCLEATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON;

CRYSTALLINE SILICON FILMS;

SEMICONDUCTING FILMS;

EID: 0036539013     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(01)01188-7     Document Type: Article

References (12)