Growth of PTCDA crystals on H:Si(1 1 1) surfaces

Surface Science

Volumn 547, Issue 3, 2003, Pages 385-393

  Chen, Q ^a   Rada, T ^a,b   Bitzer, Th ^a,c   Richardson, N V ^a  

^a UNIVERSITY OF ST ANDREWS   (United Kingdom)

^b UNIVERSIDAD DEL NORTE   (Colombia)

^c INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

Author keywords

Clusters; Dendritic and or fractile surfaces; Growth; Hydrides; Scanning tunneling microscopy; Silicon

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; DEPOSITION; EVAPORATION; HYDROGEN; INTERFACIAL ENERGY; LOW ENERGY ELECTRON DIFFRACTION; PASSIVATION; SCANNING TUNNELING MICROSCOPY; SILICON; THERMODYNAMICS;

MOLECULAR RESOLUTION; SURFACE DEFECTS;

SURFACE CHEMISTRY;

EID: 0344121132     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2003.10.021     Document Type: Article

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