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Journal of Crystal Growth

Volumn 181, Issue 3, 1997, Pages 181-192

Epitaxial growth and phase transition in multilayers of the organic semiconductor PTCDA on InAs(0 0 1)

(2) Kendrick, C a,b Kahn, A a

a Princeton University (United States)

b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY (United States)

Author keywords

InAs; Point on line coincidence; PTCDA; STM

Indexed keywords

CRYSTAL ORIENTATION; CRYSTAL SYMMETRY; EPITAXIAL GROWTH; LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR STRUCTURE; PHASE TRANSITIONS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; SURFACE PHENOMENA; SURFACE STRUCTURE;

INDIUM ARSENIDE; PERYLENETETRACARBOXYLIC DIANHYDRIDE;

SEMICONDUCTOR GROWTH;

EID: 0031268782 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00285-6 Document Type: Article

Times cited : (36)

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