Effect of thermal annealing on the microstructural and optical properties of vertically stacked InAs/GaAs quantum dots embedded in modulation-doped heterostructures

Journal of Applied Physics

Volumn 94, Issue 10, 2003, Pages 6354-6357

  Lee, H S ^a   Lee, J Y ^a   Kim, T W ^b   Kim, M D ^c  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Hanyang University   (South Korea)

^c Chungnam National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DISLOCATIONS (CRYSTALS); HETEROJUNCTIONS; LIGHT MODULATION; MICROSTRUCTURE; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

NONRADIATIVE DEFECTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0344084278     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1617360     Document Type: Article

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