Temperature dependence of the recombination activity at contaminated dislocations in Si: A model describing the different EBIC contrast behaviour

Solid State Phenomena

Volumn 69, Issue , 1999, Pages 417-422

  Kittler, M ^a   Kveder, V V ^b   Schroter W ^c  

^a IHP   (Germany)

^b INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; DISLOCATIONS (CRYSTALS); ELECTRON BEAMS; INDUCED CURRENTS; THERMAL EFFECTS;

ELECTRON BEAM INDUCED CURRENT (EBIC) CONTRAST;

SEMICONDUCTING SILICON;

EID: 0032644949     PISSN: 10120394     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/ssp.69-70.417     Document Type: Article

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