Controllable step bunching induced by Si deposition on the vicinal GaAs(001) surface

Surface Science

Volumn 459, Issue 3, 2000, Pages

  Wang, Z M ^a   Daweritz L ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; REACTION KINETICS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SINGLE CRYSTALS; SPECTROSCOPY; SUBSTRATES; SURFACE STRUCTURE;

ADATOMS; REFLECTANCE DIFFERENCE SPECTROSCOPY; STEP BUNCHING; SURFACE RECONSTRUCTION; VICINAL SINGLE CRYSTAL SURFACE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0343878118     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(00)00514-8     Document Type: Article

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