Improved accuracy in monitoring Si monolayer incorporation in GaAs during molecular beam epitaxy

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 3, 1998, Pages 1969-1975

  Daweritz L ^a   Schutzendube P ^a   Reiche, M ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DELTA-DOPED; GAAS; GAAS(001); LONG RANGE ORDERS; MIS-ORIENTATION; PHOTON ENERGY; RANDOMLY DISTRIBUTED; REFLECTANCE DIFFERENCE SPECTROSCOPY; REFLECTANCE DIFFERENCES; SI-DIMER; SINGULAR SURFACES; SURFACE KINETICS; VICINAL SURFACE; WELL-ORDERED STRUCTURE;

CARRIER CONCENTRATION; CRYSTAL GROWTH; DIMERS; GALLIUM ALLOYS; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MONOLAYERS; PHASE TRANSITIONS; REFLECTION; SEMICONDUCTING GALLIUM; SILICON; SOIL CONSERVATION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 22044457979     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581205     Document Type: Article

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