Real-time analysis of Si monolayer formation on GaAs(001) during MBE

Surface Science

Volumn 402-404, Issue , 1998, Pages 257-262

  Daweritz L ^a   Schutzendube P ^a   Reiche, M ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

Gallium arsenide; Molecular beam epitaxy; Reflectance difference spectroscopy; Reflection high energy electron diffraction; Si incorporation kinetics; Surface reconstruction

Indexed keywords

DEPOSITION; MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOTONS; REACTION KINETICS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE STRUCTURE;

REFLECTANCE DIFFERENCE SPECTROSCOPY; SURFACE RECONSTRUCTION;

SEMICONDUCTING SILICON;

EID: 0031631981     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00967-9     Document Type: Article

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