A first-principles study of Mg-related defects in GaN

Materials Science Forum

Volumn 258-263, Issue PART 2, 1997, Pages 1137-1142

  Chang, K J ^a   Lee, Sun Ghil ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Deep level defect; Gallium nitride; Photoluminescence

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; ELECTRON ENERGY LEVELS; MAGNESIUM; PASSIVATION; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING;

DEEP LEVEL DEFECTS; FIRST PRINCIPLES PSEUDOPOTENTIAL CALCULATIONS; GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031343473     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.1137     Document Type: Article

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