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Volumn 450, Issue , 1997, Pages 67-72
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Formation of double-channel mesa structure for GaSb-based mid-infrared laser
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Author keywords
[No Author keywords available]
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Indexed keywords
COMPOSITION EFFECTS;
HETEROJUNCTIONS;
LASER MODES;
PRESSURE EFFECTS;
REACTIVE ION ETCHING;
SEMICONDUCTING ANTIMONY COMPOUNDS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SURFACE STRUCTURE;
THERMAL EFFECTS;
MIDINFRARED LASERS;
RIDGE WAVEGUIDE LASERS;
SEMICONDUCTOR LASERS;
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EID: 0030701442
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (2)
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References (15)
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