Laser-action in V-groove-shaped InGaAs-InP single quantum wires

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 6, Issue 3, 2000, Pages 522-527

  Piester, Dirk ^a   Bönsch, Peter ^a   Schrimpf, Thomas ^a   Wehmann, Hergo Heinrich ^a   Schlachetzki, Andreas ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENT MEASUREMENT; ELECTRIC FIELD MEASUREMENT; ELECTROLUMINESCENCE; ETCHING; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; SPECTROSCOPY;

OPTICAL FIELD; QUANTUM WIRE LASER; SEMI INSULATING CURRENT BLOCKING LAYER; WAVEGUIDING LAYERS; WET CHEMICAL ETCHING;

SEMICONDUCTOR LASERS;

EID: 0342954970     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.865107     Document Type: Article

References (29)

1. M. Asada, Y. Miyamoto, and Y. Suematsu, "Gain and the threshold of three-dimensional quantum-box lasers," IEEE J. Quantum Electron., vol. QE-22, pp. 1915-1921, 1986.
2. Y. Arakawa and H. Sakaki, "Multidimensional quantum well laser and temperature dependence of its threshold current," Appl. Phys. Lett., vol. 40, pp. 939-941, 1982.
3. N. N. Ledentsov, "Quantum dot lasers: The birth and future trends," Semiconductors, vol. 33, pp. 946-950, 1999.
4. 0.6 As/GaAs self-organized quantum dot lasers," Appl. Phys. Lett., vol. 74, pp. 783-785, 1999.
5. G. Park, O. B. Shchekin, S. Csutak, D. L. Huffaker, and D. G. Deppe, "Room-temperature continuous-wave operation of a single-layered 1.3 "m quantum dot laser," Appl. Phys. Lett., vol. 75, pp. 3267-3269, 1999.
6. M. Higashiwaki, S. Shimomura, S. Hiyamizu, and S. Ikawa, "Self-or-ganized GaAs quantum-wire lasers grown on (775) B-oriented GaAs substrates by molecular beam epitaxy," Appl. Phvs. Lett., vol. 74, pp. 780-782, 1999.
7. S. T. Chou, D. E. Wohlert, K. Y. Cheng, and K. C. Hsieh, "The directionality of quantum confinement on strain-induced quantum-wire lasers," J. Appl. Phys., vol. 83, pp. 3469-3472, 1998.
8. S. Watanabe, S. Koshiba, M. Yoshita, H. Sakaki, M. Baba, and H. Akiyama, "Stimulated emission in ridge quantum wire laser structures measured with optical pumping and microscopic imaging methods," Appl. Phys. Lett., vol. 73, pp. 511-513, 1998.
9. S. Hara, J. Motohisa, and T. Fukui, "Self-organized InGaAs quantum wire lasers on GaAs multi-atomic steps," Electron. Lett., vol. 34, pp. 894-895, 1998.
10. T. Kojima, M. Tamura, H. Nakaya, S. Tanaka, S. Tamura, and S. Arai, "GaInAsP/InP compressively strained quantum-wire lasers fabricated by electron beam lithography and 2-step organometallic vapor phase epitaxy," Jpn. J. Appl. Phys., vol. 37, pp. 4792-4800, 1998.
11. M. Ishikawa, W. Pan, Y. Kaneko, H. Yaguchi, K. Onabe, R. Ito, and Y. Shiraki, "Polarization characteristics of crescent-shaped tensile-strained GaAsP/AlGaAs quantum wire-like lasers," Jpn. J. Appl. Phys., vol. 37, pp. 1556-1558, 1998.
12. T. Toda and Y. Nakano, "Room temperature operation of 1.5 μm InAsP/InP strained quantum wire DFB lasers fabricated by mass transport method," in Proc. 11th Int. Conf. Indium Phosphide and Related Mater., Davos, Switzerland, May 16-20, 1999, pp. 17-20.
13. S. Tiwari, G. D. Pettit, K. R. Milkove, F. Legoues, R. J. Davis, and J. M. Woodall, "High efficiency and low threshold current strained V-groove quantum-wire lasers," Appl. Phys. Lett., vol. 64, pp. 3536-3538, 1994.
14. S. Simhony, E. Kapon, E. Colas, D. M. Hwang, N. G. Stoffel, and P. Worland, "Vertically stacked multiple-quantum-wire semiconductor diode lasers," Appl. Phys. Lett., vol. 59. pp. 2225-2227, 1991.
15. T. G. Kim, X.-L. Wang, K. Komori, K. Hikosaka, and M. Ogura, "AlGaAs/GaAs quantum wire lasers fabricated by flow rate modulation epitaxy," Electron. Lett., vol. 35, pp. 639-640, 1999.
16. P. Bönsch, D. Wüllner, T. Schrimpf, H.-H. Wehmann, and A. Schlachetzki. "Growth of InGaAs/InP quantum wires on patterned substrates," in Proc. 7th European Workshop Metal-Organic Vapor Phase Epitaxy Related Growth Tech. (EW-MOVPE VII), C1, Berlin, Germany, June 8-11, 1997.
17. M. Kappelt, M. Grundmann, A. Krost, V. Türck, and D. Bimberg, "InGaAs quantum wires grown by low pressure metalorganic chemical vapor deposition on InP V-grooves," Appl. Phys. Lett., vol. 68, pp. 3596-3598, 1996.
18. J. Diaz, H. J. Yi, M. Razeghi, and G. T. Burnham, "Long-term reliability of Al-free InGaAsP/GaAs (λ = 808 nm) lasers at high-power high-temperature operation," Appl. Phys. Lett., vol. 71, pp. 3042-3044, 1997.
19. T. G. Kim, K. H. Park, S.-M. Hwang, Y. Kim, E. K. Kim, S.-K. Min, S.-J. Leem, J.-I. Jeon, J.-H. Park, and W. S. C. Chang, "Performance of GaAs-AlGaAs V-grooved inner stripe quantum well wire lasers with different current blocking configurations," IEEE J. Quantum Electron., vol. 34, pp. 1461-1468, 1998.
20. E. Kapon, S. Simhony, R. Bhat, and D. M. Hwang, "Single quantum wire semiconductor lasers," Appl. Phys. Lett., vol. 55, pp. 2715-2717, 1989.
21. "ToSCA two-dimensional semi-conductor analyze package," Weierstraß-Institut, Berlin, Germany.
22. "BPM_CAD waveguide optics modeling software system," Optiwave Corp., Nepean, Ont., Canada.
23. 0.47-As masks," J. Electrochem. Soc., vol. 141, pp. 1594-1599, 1994.
24. H.-H. Wehmann, T. Schrimpf, P. Bönsch, D. Wülner, D. Piester, A. Schlachetzki, and R. Lacmann, "Growth and characterization of InGaAs quantum-wires," in Proc. 3rd Int. Wkshp. Heterostructure Epitaxy Devices (HEAD'97), P. Kordos and J. Novak, Eds. Dordrecht: Kluwer Academic, 1998, pp. 199-202. NATO Series 3/48.
25. P. Bönsch, D. Wüllner, T. Schrimpf, A. Schlachetzki, and R. Lacmann, "Ultrasmooth V-grooves in InP by two-step wet chemical etching," J. Electrochem. Soc., vol. 145, pp. 1273-1276, 1998.
26. H.-H. Wehmann and A. Schlachetzki, "Technology and characterization of a photoconductive device on InP," in Proc. ESSDERC'89, A. Heuberger, H. Ryssel, and P. Lange, Eds. Berlin: Springer, 1989, pp. 491-494.
27. T. Schrimpf, P. Bönsch, D. Wüllner, H.-H. Wehmann, A. Schlachetzki, F. Bertram, T. Riemann, and J. Christen, "InGaAs quantum wires and wells on V-grooved InP substrates," J. Appl. Phys., vol. 86, pp. 5207-5214, 1999.
28. T. Schrimpf, D. Piester, H.-H. Wehmann, P. Bönsch, D. Wüllner, A. Schlachetzki, C. Mendorf, and H. Lakner, "Preparation and characterization of InGaAs quantum wires on V-groove patterned InP," in Proc. 11th Int. Conf. Indium Phosphide and Related Mater., Davos, Switzerland, May 16-20, 1999, pp. 507-510.
29. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981.