Performance of GaAs-AlGaAs V-grooved inner stripe quantum-well wire lasers with different current blocking configurations

IEEE Journal of Quantum Electronics

Volumn 34, Issue 8, 1998, Pages 1461-1467

  Kim, Tae Geun ^b,c,d   Park, Kyung Hyun ^b,e   Hwang, Sung Min ^b,d,f,g   Kim, Yong ^b   Kim, Eun Kyu ^b   Min, Suk Ki ^b   Leem, Si Jeong ^d   Jeon, Jong Il ^d   Park, Jung Ho ^d   Chang, William S C ^a,c  

^a IEEE

^b Korea Institute of Science and Technology   (South Korea)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d Korea University   (South Korea)

^e Yonsei University   (South Korea)

^f Hanyang University   (South Korea)

^g Industrial Electronic R and D Center   (South Korea)

Author keywords

Epitaxial growth; Lasers; Quantum well wire laser; Stimulated emission

Indexed keywords

EPITAXIAL GROWTH; LASER MODES; LEAKAGE CURRENTS; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES;

QUANTUM WELL WIRE (QWW) LASERS; V GROOVED INNER STRIPE (VIS);

QUANTUM WELL LASERS;

EID: 0032139931     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.704342     Document Type: Article

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