Self-organised InGaAs quantum wire lasers on GaAs multi-atomic steps

Electronics Letters

Volumn 34, Issue 9, 1998, Pages 894-895

  Hara, S ^a   Motohisa, J ^a   Fukui, T ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; SPECTRUM ANALYSIS;

MULTI ATOMIC STEPS; QUANTUM WIRE LASER DIODES;

SEMICONDUCTOR LASERS;

EID: 0032045295     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980673     Document Type: Article

References (9)

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3. HARA, S., ISHIZAKI, J., MOTOHISA, J., FUKUI, T., and HASEGAWA, H.: 'Formation and photoluminescence characterization of quantum well wires using multiatomic steps grown by metalorganic vapor phase epitaxy', J. Cryst. Growth, 1994, 145, pp. 692-697
4. HARA, S., MOTOHISA, J., and FUKUI, T.: 'Formation and characterization of InGaAs strained quantum wires on GaAs multiatomic steps grown by metalorganic vapor phase epitaxy', J. Cryst. Growth, 1997, 170, pp. 579-584
5. HARA, S., MOTOHISA, J., and FUKUI, T.: 'Optical characterization and laser operation of InGaAs quantum wires on GaAs multiatomic steps', Solid-State Electron., to be published
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8. m short period binary superlattice period on quantum wire formation by strain induced lateral layer ordering in GaInP/AlInP multi-quantum-wire lasers'. Proc. 7th Int. Conf. IPRM (IEEE Catalog #95CH35720), 1995, pp. 29-32
9. PEARAH, P.J., CHEN, A.C., MOY, A.M., HSIEH, K.-C., and CHENG, K.-Y.: 'AlGaInP multiple quantum wire heterostructure lasers prepared by the strain-induced lateral-layer ordering process', IEEE J. Quantum Electron., 1994, QE-30, pp. 608-618