AlGaAs/GaAs quantum wire lasers fabricated by flow rate modulation epitaxy

Electronics Letters

Volumn 35, Issue 8, 1999, Pages 639-640

  Kim, T G ^a,b   Wang, X L ^a,c   Komori, K ^a,c   Hikosaka, K ^a   Ogura, M ^a,c  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b NEW ENERGY AND INDUSTRIAL TECHNOLOGY DEVELOPMENT ORGANIZATION   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FLOW RATE MODULATION EPITAXY; THRESHOLD CURRENTS;

SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WIRES;

SEMICONDUCTOR LASERS;

EID: 0032680002     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990458     Document Type: Article

References (6)

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2. TIWARI, S., DAVID, P., MILKOVE, K.R., and LEGOUES, E.: 'High efficiency and low threshold current strained V-groove quantum wire lasers', Appl. Phys. Lett., 1994, 64, pp. 3536-3538
3. SIMHONY, S., DAPON, E., COLAS, E., HWANG, D.M., STOFFEL, N.G., and WORLAND, P.: 'Vertically stacked multiple quantum wire semiconductor diode lasers', Appl. Phys. Lett., 1991, 59, pp. 2225-2227
4. WANG, X.-L., OGURA, M., and MATSUHATA, H.: 'Self-limiting effects of flow rate modulation epitaxy of GaAs on patterned substrate', J. Cryst. Growth, 1998, 195, pp. 586-590
5. WANG, X.-L., OGURA, M., MATSUHATA, H., and HAMOUDI, A.: 'Large excited state Stokes shift in crescent-shaped AlGaAs/GaAs quantum wires', Appl. Phys. Lett., 1997, 71, pp. 2130-2132
6. KIM, T.G., KIM, E.K., MIN, S.K., and PARK, J.H.: 'Improvement of carrier capture efficiency of short-period GaAs/AlGaAs quantum wire array by a new lithography method', Appl Phys. Lett., 1996, 69, pp. 955-956