Depth and profile control in plasma etched MEMS structures

Sensors and Actuators, A: Physical

Volumn 82, Issue 1, 2000, Pages 234-238

  Kiihamaki J ^a   Kattelus, H ^a   Karttunen, J ^a   Franssila, S ^b  

^a VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

^b AALTO UNIVERSITY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; MICROMACHINING; PLASMA ETCHING;

INDUCTIVELY COUPLED PLASMA (ICP); WET ETCHING;

MICROELECTROMECHANICAL DEVICES;

EID: 0342906553     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(99)00336-2     Document Type: Article

References (7)

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3. Kattelus H. Wet refinement of dry etched trenches in silicon. J. Electrochem. Soc. 144(9):1997;3188-3191.
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7. Kiihamäki J., Franssila S. Deep silicon etching in inductively coupled plasma reactor for MEMS. Phys. Scr. T79:1999;250-254.