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Volumn 175-176, Issue pt 2, 1997, Pages 689-1340

Proceedings of the 1996 9th International Conference on Molecular Beam Epitaxy. Part 2 (of 2)

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Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; HETEROJUNCTIONS; INJECTION LASERS; MAGNETIC SEMICONDUCTORS; QUANTUM WELL LASERS; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SILICON ON INSULATOR TECHNOLOGY;

ALTERNATING MOLECULAR BEAM EPITAXY; EIREV; EPITAXIAL SHADOW MASK MOLECULAR BEAM EPITAXY (ESM MBE); GAS SOURCE MOLECULAR BEAM EPITAXY; GLANCING ANGLE MOLECULAR BEAM EPITAXY; HETEROEPITAXY; LATTICE MISMATCH; MODULATED MOLECULAR BEAM EPITAXY (MMBE); PULSED MOLECULAR BEAM SCATTERING; STRANSKI KRASTANOV GROWTH;

MOLECULAR BEAM EPITAXY;

EID: 0031142737 PISSN: 00220248 EISSN: None Source Type: Conference Proceeding
DOI: 10.1016/S0022-0248(96)01021-4 Document Type: Conference Review

Times cited : (12)

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