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Volumn 189-190, Issue , 1998, Pages 47-51
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Growth of GaN and InGaN prepared by a hot wall beam epitaxy system with NH3
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Author keywords
GaN; GaN buffer layer; Growth interruption; Hot wall epitaxy (HWE); InGaN; Photoluminescence (PL)
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Indexed keywords
CRYSTAL ORIENTATION;
CRYSTALLINE MATERIALS;
EMISSION SPECTROSCOPY;
EPITAXIAL GROWTH;
NITRIDES;
PHOTOLUMINESCENCE;
SAPPHIRE;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR GROWTH;
GROWTH INTERRUPTION METHOD;
HOT WALL EPITAXY (HWE);
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 0032094125
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(98)00154-7 Document Type: Article |
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Times cited : (5)
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References (8)
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