Very low energy nitrogen implantation for ultrathin silicon oxynitride film formation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 252-256

  Salgado, T D M ^a   Stedile, F C ^a   Krug, C ^a   Baumvol, U R ^a   Radtke, C ^a  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

Author keywords

Low energy ion deposition; N ion implantation; Silicon oxynitride films

Indexed keywords

DEPOSITION; FILM GROWTH; ION IMPLANTATION; ISOTOPES; NITROGEN; OXYGEN; SILICON NITRIDE; SILICON WAFERS; THERMOOXIDATION; ULTRATHIN FILMS;

NUCLEAR REACTION ANALYSIS (NRA); SILICON OXYNITRIDE;

DIELECTRIC FILMS;

EID: 0033513877     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00829-5     Document Type: Article

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