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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 5, 2003, Pages 2142-2146

Highly selective and high rate SiO2 etching using argon-added C2F4/CF3I plasma

(5) Ohtake, H a,b Ishihara, H c Fuse, T c Koshiishi, A c Samukawa, S a

a TOHOKU UNIVERSITY (Japan)

b NEC CORPORATION (Japan)

c TOKYO ELECTRON LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; ARGON; ASPECT RATIO; ETCHING; FLUOROCARBONS; ION BOMBARDMENT; PHOTORESISTS; PLASMAS; REACTIVE ION ETCHING; X RAY PHOTOELECTRON SPECTROSCOPY;

ETCHING SELECTIVITY; SUPERCAPACITIVE COUPLING MODULE; ULTRAHIGH FREQUENCY PLASMA;

SILICA;

EID: 0242593757 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (20)

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