Fast epitaxial growth of 4H-SiC by chimney-type hot-wall CVD

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 175-178

  Fujihira, K ^a   Kimoto, T ^a   Matsunami, H ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

4H SiC (033 8) plane; Chemical vapor deposition CVD; Deep levels; Photoluminescence

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); DIODES; EPILAYERS; PHOTOLUMINESCENCE; SILICON CARBIDE; CHIMNEYS; EPITAXIAL GROWTH; GROWTH RATE; POWER SEMICONDUCTOR DIODES;

DEEP LEVELS; HOMOEPITAXIALLY GROWN; 4H-SIC (0338) PLANE; DEEP-LEVELS; DONOR CONCENTRATIONS; FAST EPITAXIAL GROWTHS; HIGH BREAKDOWN VOLTAGE; HIGH GROWTH RATE; SPECULAR SURFACE; VERTICAL HOT WALL;

EPITAXIAL GROWTH; SILICON CARBIDE;

EID: 0012586621     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.175     Document Type: Article

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