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Corrosion Science

Volumn 44, Issue 3, 2002, Pages 501-509

Oxide formation during etching of gallium arsenide

(4) Ghidaoui, D a Lyon, S B a Thompson, G E a Walton, J a

a UNIVERSITY OF MANCHESTER (United Kingdom)

Author keywords

Dielectric constant; Etching; GaAs; Oxide thickness

Indexed keywords

CAPACITANCE MEASUREMENT; ELECTRIC IMPEDANCE MEASUREMENT; ELECTRIC POTENTIAL; ETCHING; FILM GROWTH; IONIC CONDUCTION; PERMITTIVITY; SOLVENTS; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

OXIDE FILMS;

SEMICONDUCTING GALLIUM ARSENIDE;

DEGREASING; DIELECTRIC PROPERTY; ETCHING; SPECTROSCOPY; X-RAY;

EID: 0036497613 PISSN: 0010938X EISSN: None Source Type: Journal
DOI: 10.1016/S0010-938X(01)00086-5 Document Type: Article

Times cited : (14)

References (20)

1
- 0007645385
- (1976) Jpn. J. Appl. Phys , vol.15 , pp. 1317
- Oda, T.¹ Sugano, T.²

2
- 0019438315
- (1981) J. Electrochem. Soc , vol.128 , pp. 149
- Munoz-Yague, A.¹ Piqueras, J.² Fabre, J.³

3
- 84975381599
- (1977) J. Electrochem. Soc , vol.124 , pp. 155
- Shiota, I.¹ Motoya, K.² Ohmi, Y.³ Miyamoto, N.⁴ Nishizawa, J.⁵

4
- 0000981784
- (1985) Appl. Phys. Lett , vol.46 , pp. 1071
- Aspnes, D.E.¹ Studna, A.A.²

5
- 0022711589
- (1986) Int. J. Electron , vol.60 , pp. 561
- Sethi, B.R.¹ Hartnagel, H.L.² Jourdan, G.³

6
- 0001076603
- (1985) Surf. Sci , vol.162 , pp. 708
- Alnot, P.¹ Wyczisk, F.² Friederich, A.³

7
- 84910810844
- (1977) J. Electrochem. Soc , vol.124 , pp. 466
- Szpak, S.¹ Tomlinson, J.L.² Narayanan, G.³

8
- 0015672991
- (1973) J. Electrochem. Soc , vol.120 , pp. 1385
- Logan, R.A.¹ Schwartz, B.² Sundburg, W.J.³

9
- 84918377674
- (1977) J. Electrochem. Soc , vol.124 , pp. 1784
- Ishii, T.¹ Jeppsson, B.²

10
- 21544451258
- (1975) Appl. Phys. Lett , vol.26 , pp. 567
- Hasegawa, H.¹ Forward, K.E.² Hartnagel, H.L.³

11
- 0007700404
- (1976) Thin Solid Films , vol.38
- Weimann, G.¹ Schlapp, W.²

12
- 0030257510
- (1996) J. Phys. D: Appl. Phys , vol.29 , pp. 2545
- Habazaki, H.¹ Skeldon, P.² Ghidaoui, D.³ Lyon, S.B.⁴ Shimizu, K.⁵ Thompson⁶

13
- 0000269818
- (1996) J. Appl. Phys , vol.79 , pp. 7303
- Schmuki, P.¹ Sproule, G.I.² Bardwell, J.A.³ Lu, Z.H.⁴ Graham, M.J.⁵

14
- 0018310078
- (1979) Thin Solid Films , vol.56 , pp. 63
- Watanabe, K.¹ Hashiba, M.² Hirohata, Y.³ Nishino, M.⁴ Yamashima, T.⁵

15
- 84975363543
- (1977) J. Electrochem. Soc , vol.124 , pp. 802
- Verplancke, J.C.¹ Tijburg, R.J.²

16
- 0015913658
- (1973) Thin Solid Films , vol.19 , pp. 81
- Feldman, L.C.¹ Poate, J.M.² Ermanis, F.³ Schwartz, B.⁴

17
- 0018521577
- (1979) J. Vac. Sci. Technol , vol.16 , pp. 1434
- Wilmsen, C.W.¹ Kee, R.W.² Geib, K.M.³

18
- 0017504255
- (1977) J. Electrochem. Soc , vol.124 , pp. 922
- Chang, C.C.¹ Schwartz, B.² Murarka, S.³

19
- 0007684594
- University of Twente, Netherlands
- Equivert - Electrochemical Impedance Modelling Programme
- Boukamp, B.¹

20
- 0001203748
- (1993) J. Vac. Sci. Technol. B , vol.11 , pp. 2033
- Lu, Z.H.¹ Bryskiewicz, B.² McCaffrey, J.³ Wasilewski, Z.⁴ Graham, M.J.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.