Shouldering in B diffusion profiles in Si: Role of di-boron diffusion

Applied Physics Letters

Volumn 83, Issue 17, 2003, Pages 3501-3503

  Hwang, Gyeong S ^a,b   Goddard III, William A ^b  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BINDING ENERGY; BORON; CRYSTAL IMPURITIES; DIFFUSION; DISSOCIATION; FERMI LEVEL; STRESSES;

COMPLEXES; NEUTRAL INTERSTITIALS;

SILICON;

EID: 0242498432     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1619219     Document Type: Article

References (19)

1. B. Sadigh, T. J. Lenosky, S. K. Theiss, M.-J. Caturla, T. Diaz de Rubia, and M. A. Foad, Phys. Rev. Lett. 83, 4341 (1999).
2. W. Windl, M. M. Bunea, R. Stumpf, S. T. Dunham, and M. P. Masquelier, Phys. Rev. Lett. 83, 4345 (1999).
3. E. Schroer, V. Privitera, F. Priolo, E. Napolitani, and A. Camera, Appl. Phys. Lett. 74, 3996 (1999).
4. A. F. W. Willoughby, A. G. R. Evans, P. Champ, K. J. Yallup, D. J. Godfrey, and M. G. Dowsett, J. Appl. Phys. 59, 2392 (1986).
5. G. S. Hwang and W. A. Goddard III, Phys. Rev. Lett. 89, 055901 (2002).
6. J. Zhu, T. Diaz de Rubia, L. H. Yang, and C. Maihiot, Phys. Rev. B 54, 4741 (1996); J. Zhu, Comput. Mater. Sci. 12, 309 (1998).
7. J. Zhu, T. Diaz de Rubia, L. H. Yang, and C. Maihiot, Phys. Rev. B 54, 4741 (1996); J. Zhu, Comput. Mater. Sci. 12, 309 (1998).
8. X.-Y. Liu, W. Windl, and M. P. Masquelier, Appl. Phys. Lett. 77, 2018 (2000).
9. 1/2≈56.46.
10. D. J. Eaglesham, P. A. Stolk, H.-J. Gossmann, and J. M. Poate, Appl. Phys. Lett. 65, 2305 (1994).
11. P. M. Fahey, P. B. Griffin, and J. D. Plummer, Rev. Mod. Phys. 61, 289 (1989); W. Shockley and J. T. Last, Phys. Rev. 107, 392 (1957).
12. P. M. Fahey, P. B. Griffin, and J. D. Plummer, Rev. Mod. Phys. 61, 289 (1989); W. Shockley and J. T. Last, Phys. Rev. 107, 392 (1957).
13. x, where p and n are the extrinsic and intrinsic carrier concentration, respectively. Here the subscript i indicates the value obtained under intrinsic conditions.
14. W. Shockley and J. T. Last, Phys. Rev. 107, 392 (1957).
15. G. D. Watkins, Mater. Sci. Semicond. Process. 3, 227 (2000).
16. L. Pelaz, M. Jaraiz, G. H. Gilmer, H.-J. Gossmann, C. S. Rafferty, D. J. Eaglesham, and J. M. Poate, Appl. Phys. Lett. 70, 2285 (1997).
17. K. Kyllesbech Larsen, P. Stolk, V. Privitera, J. G. M. van Berkum, W. B. de Boer, G. Mannino, N. E. B. Cowern, and H. G. A. Huizing, Mater. Res. Soc. Symp. Proc. 469, 291 (1997).
18. M. Laudon, N. N. Carlson, M. P. Masquelier, M. S. Daw, and W. Windl, Appl. Phys. Lett. 78, 201 (2001); references cited therein.
19. H. Park, K. S. Jones, J. A. Slinkman, and M. E. Law, J. Appl. Phys. 78, 3664 (1995).