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Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 51-54

Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth

(5) Bickermann, M a Hofmann, D a Straubinger, T L a Weingartner R a Winnacker, A a

a UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

Author keywords

Bulk Growth; Compensation Mechanism; Homogeneous Incorporation; Semi Insulating; Vanadium Doping

Indexed keywords

ACTIVATION ENERGY; CRYSTAL GROWTH; DOPING (ADDITIVES); FERMI LEVEL; VANADIUM;

BULK CRYSTALS;

SILICON CARBIDE;

EID: 0242497064 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.433-436.51 Document Type: Conference Paper

Times cited : (14)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.