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Volumn 389-393, Issue 1, 2002, Pages 127-130
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Incorporation of boron and the role of nitrogen as a compensation source in SiC bulk crystal growth
a a a a a |
Author keywords
Boron doping; Bulk growth; Compensation; Dopant incorporation; Hall effect; Impurity incorporation; Segregation
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Indexed keywords
BORON;
CHARGE CARRIERS;
CRYSTAL GROWTH;
HALL EFFECT;
IMPURITIES;
NITROGEN;
SEGREGATION (METALLOGRAPHY);
CHEMICAL ANALYSIS;
COMPENSATION (PERSONNEL);
CRYSTAL IMPURITIES;
SILICON CARBIDE;
BORON DOPING;
BULK GROWTH;
DOPANT INCORPORATION;
IMPURITY INCORPORATION;
SEGREGATION;
BORON INCORPORATIONS;
BORON-DOPING;
HALL EFFECT MEASUREMENT;
INCORPORATION BEHAVIORS;
TEMPERATURE DEPENDENT;
SILICON CARBIDE;
CARRIER CONCENTRATION;
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EID: 4243679548
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.389-393.127 Document Type: Article |
Times cited : (3)
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References (10)
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