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Volumn 389-393, Issue 1, 2002, Pages 127-130

Incorporation of boron and the role of nitrogen as a compensation source in SiC bulk crystal growth

Author keywords

Boron doping; Bulk growth; Compensation; Dopant incorporation; Hall effect; Impurity incorporation; Segregation

Indexed keywords

BORON; CHARGE CARRIERS; CRYSTAL GROWTH; HALL EFFECT; IMPURITIES; NITROGEN; SEGREGATION (METALLOGRAPHY); CHEMICAL ANALYSIS; COMPENSATION (PERSONNEL); CRYSTAL IMPURITIES; SILICON CARBIDE;

EID: 4243679548     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.127     Document Type: Article
Times cited : (3)

References (10)
  • 1
    • 34247221506 scopus 로고    scopus 로고
    • T. L. Straubinger, M. Bickermann, M. Rasp, R. Weingärtner, P. J. Wellmann, A. Winnacker, this conference, Mater. Sci. Forum (2002) to be published
    • T. L. Straubinger, M. Bickermann, M. Rasp, R. Weingärtner, P. J. Wellmann, A. Winnacker, this conference, Mater. Sci. Forum (2002) to be published


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.