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Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 139-142

On the preparation of vanadium-doped semi-INsulating SiC bulk crystals

(5) Bickermann, M a Hofmann, D a Straubinger, T L a Weingartner R a Winnacker, A a

a UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

Author keywords

Boron doping; Bulk growth; Dopant homogeneity; Hall effect; Resistivity mapping; Semi insulating SiC; Vanadium doping

Indexed keywords

ACTIVATION ENERGY; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; IMPURITIES; INFRARED ABSORPTION; PARTIAL PRESSURE; SILICON CARBIDE; VANADIUM; BORON; CRYSTAL IMPURITIES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HALL EFFECT; INFRARED DEVICES; INSULATION; LIGHT ABSORPTION; MAPPING; NITROGEN;

BORON DOPING; BULK GROWTH; DOPANT HOMOGENEITY; RESISTIVITY MAPPING; VANADIUM DOPING; BORON-DOPING; DOPANT HOMOGENEITIES; SEMI-INSULATING;

SINGLE CRYSTALS; SILICON CARBIDE;

EID: 0038724233 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.389-393.139 Document Type: Article

Times cited : (18)

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