Features of semi-insulating SiC single-crystal growth by physical vapor transport

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 53-56

  Reshanov, S A ^a   Rastegaev, V P ^a   Tairov, Yu M ^a  

^a StPetersburg State E ^*  (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; ELECTRIC INSULATING MATERIALS; PHOTOCONDUCTIVITY; RELAXATION PROCESSES; SINGLE CRYSTALS; SOLUBILITY; VANADIUM;

INSULATING PROPERTIES; PHYSICAL VAPOR TRANSPORT; SEMI INSULATING SILICON CARBIDE;

SILICON CARBIDE;

EID: 0035125675     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.53     Document Type: Article

References (10)

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