4H-SiC ACCUFET with a two-layer stacked gate oxide

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1073-1076

  Kaneko, Saichirou ^a   Tanaka, Hideaki ^a   Shimoida, Yoshio ^a   Kiritani, Norihiko ^a   Tanimoto, Satoshi ^a   Yamanaka, Mitsugu ^a   Hoshi, Masakatsu ^a  

^a NISSAN MOTOR CO   (Japan)

Author keywords

ACCUFET; Field effect mobility; Interface state density; Stacked gate oxide

Indexed keywords

GATES (TRANSISTOR); MOSFET DEVICES; SILICATES; SILICON CARBIDE; CARRIER CONCENTRATION; CARRIER MOBILITY; COMPUTER SIMULATION; FUSED SILICA; INTERFACES (MATERIALS); OXIDES;

ACCUFET; ACCUMULATION MODES; CHANNEL MOBILITY; FIELD-EFFECT MOBILITIES; INTERFACE STATE DENSITY; STACKED GATE; THERMAL OXIDES; THERMALLY GROWN OXIDE; STACKED GATE OXIDES;

INTERFACE STATES; MOSFET DEVICES;

EID: 0036429289     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1073     Document Type: Conference Paper

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