A method to obtain ground state electroluminescence from 1.3 μm emitting InAs/GaAs quantum dots grown by molecular beam epitaxy

Chinese Physics

Volumn 12, Issue 1, 2003, Pages 97-99

  Kong, Yun Chuan ^a   Zhou, Da Yong ^a   Lan, Qing ^a   Liu, Jin Long ^a   Miao, Zhen Hua ^a   Song Lin, Feng ^a   Zhi Chuan, Niu ^a  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

Electroluminescence; Quantum dots; State filling effect

Indexed keywords

ELECTRIC EXCITATION; ELECTROLUMINESCENCE; GROUND STATE; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR GROWTH; SPECTRUM ANALYSIS;

ACTIVE REGION; ELECTROLUMINESCENCE SPECTROSCOPY; STATE FILLING EFFECT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0242424030     PISSN: 10091963     EISSN: None     Source Type: Journal    
DOI: 10.1088/1009-1963/12/1/318     Document Type: Article

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