Surface morphology and optical property of 1.3 μm In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 17, Issue 1-4, 2003, Pages 114-116

  Lan, Q ^a   Niu, Z C ^a   Zhou, D Y ^a   Kong, Y C ^a   Wang, X D ^a   Miao, Z H ^a   Feng, S L ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Molecular beam epitaxy; Photoluminescence; Quantum dots

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

MONOLAYER DEPOSITION METHOD;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037393290     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00735-X     Document Type: Conference Paper

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