In-line and non-destructive analysis of epitaxial Si1-x-yGe xCyby spectroscopic ellipsometry and comparison with other established techniques

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5133, Issue , 2003, Pages 329-338

  Loo, R ^a   Meunier Beillard, P ^b   Delhougne, R ^a   Koumoto, T ^c   Geenen, L ^a   Brijs, B ^a   Vandervorst, W ^a  

^a IMEC   (Belgium)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CMOS INTEGRATED CIRCUITS; COMPOSITION; ELLIPSOMETRY; NONDESTRUCTIVE EXAMINATION; OPTIMIZATION;

SPECTROSCOPIC ELLIPSOMETRY (SE);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0242468955     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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