High-temperature probe station for use in microwave device characterization through 500°C

61st ARFTG Conference Digest Spring 2003: Measurement Accuracy, ARFTG Spring 2003

Volumn , Issue , 2003, Pages 27-35

  Schwartz, Zachary D ^a   Downey, Alan N ^b   Alterovitz, Samuel A ^b   Ponchak, George E ^b  

^a ANALEX CORPORATION   (United States)

^b NASA GLENN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MICROWAVE DEVICES; NASA; PROBES; SEMICONDUCTOR DEVICES; SILICON CARBIDE; SILICON WAFERS; TEMPERATURE MEASUREMENT;

ACTIVE AND PASSIVE DEVICE; DEVICE CHARACTERIZATION; FREQUENCY RANGES; HEWLETT-PACKARD; HIGH TEMPERATURE MEASUREMENT; HIGH TEMPERATURE PROBE STATION; MICROWAVE PROBES; MICROWAVE TESTING;

MICROWAVE MEASUREMENT;

EID: 84954228039     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ARFTGS.2003.1216864     Document Type: Conference Paper

References (8)

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