Growth of strained GaAs islands on (0 0 1) GaP: A RHEED study of quantum wire formation

Journal of Crystal Growth

Volumn 188, Issue 1-4, 1998, Pages 387-391

  Ohlsson, B Jonas ^a   Miller, Mark S ^a,b  

^a LUND UNIVERSITY   (Sweden)

^b University of Virginia   (United States)

Author keywords

CBE; III V; MOMBE; RHEED; S K growth

Indexed keywords

ANISOTROPY; ATOMIC FORCE MICROSCOPY; CHEMICAL BEAM EPITAXY; MOLECULAR BEAM EPITAXY; MONOLAYERS; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES;

GALLIUM PHOSPHIDE; ISLAND RELATED DIFFRACTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032097686     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0022-0248(98)00071-2     Document Type: Article

References (6)

1. L. Goldstein, F. Glas, J.Y. Marzin, M.N. Charasse, G.L. Roux, Appl. Phys. Lett. 47 (1985) 1099.
2. D.J. Eaglesham, M. Cerullo, Phys. Rev. Lett. 64 (1990) 1943.
3. B.J. Ohlsson, M.S. Miller, M.-E. Pistol, xxx.lanl.gov e-print archive, cond-mat/9710084.
4. H.W.P. Koops, R. Weiel, D.P. Kern, T.H. Baum, J. Vac. Sci. Technol. B 6 (1988) 477.
5. B. Hübner, H.W.P. Koops, H. Pagnia, N. Sotnik, J. Urban, M. Weber, Ultramicroscopy 42-44 (1992) 1519.
6. M.S. Miller, S. Jeppesen, D. Hessman, B. Kowalski, I. Maximov, B. Junno, L. Samuelson, Solid State Electron. 40 (1996) 609.