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Volumn 201, Issue , 1999, Pages 113-117
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In situ observation of reconstruction related surface stress during molecular beam epitaxy (MBE) growth of III-V compounds
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Author keywords
[No Author keywords available]
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Indexed keywords
ANISOTROPY;
CRYSTAL ORIENTATION;
MOLECULAR BEAM EPITAXY;
REACTION KINETICS;
SEMICONDUCTOR GROWTH;
STRESS ANALYSIS;
SUBSTRATES;
SURFACE ROUGHNESS;
SURFACE STRUCTURE;
THERMAL EFFECTS;
OPTICAL DEFLECTION TECHNIQUE;
SURFACE RECONSTRUCTION;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 0032688623
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(98)01301-3 Document Type: Article |
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Times cited : (33)
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References (5)
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