Optical properties of self-assembled GaxIn1-xAs/InP quantum wires

Physica Status Solidi (A) Applied Research

Volumn 190, Issue 3, 2002, Pages 763-768

  Al n, B ^a   Biswas, D ^a,c   Mart nez Pastor, J ^a   Garc a, J M ^b   Gonz lez, L ^b  

^a UNIVERSITY OF VALENCIA   (Spain)

^b CSIC   (Spain)

^c Institute of Radiophysics and Electronics   (India)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT EMISSION; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; THERMAL EFFECTS;

EMISSION WAVELENGTH; GALLIUM INDIUM ARSENIDE; OPTICAL QUALITY;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0036542383     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200204)190:3<763::AID-PSSA763>3.0.CO;2-7     Document Type: Article

References (9)