High-Performance Self-Aligned SiGeC HBT with Selectively Grown Si 1-x-yGexCy Base by UHV/CVD

IEEE Transactions on Electron Devices

Volumn 50, Issue 11, 2003, Pages 2213-2220

  Oda, Katsuya ^a   Ohue, Eiji ^a   Suzumura, Isao ^a   Hayami, Reiko ^a   Kodama, Akihiro ^a   Shimamoto, Hiromi ^a   Washio, Katsuyoshi ^a  

^a HITACHI LTD   (Japan)

Author keywords

Crystallinity; Cutoff frequency; Emitter coupled logic (ECL); Heterojunction bipolar transistor (HBT); Maximum oscillation frequency; Selective epitaxial growth (SEG); Si1 x yGexCy

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL LATTICES; ELECTRIC RESISTANCE; FREQUENCIES; SEMICONDUCTING SILICON COMPOUNDS; ULTRAHIGH VACUUM;

SELECTIVE EPITAXIAL GROWTH (SEG);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0242332719     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.816660     Document Type: Article

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