Strain measurements of SiGeC heteroepitaxial layers on Si(001) using ion beam analysis

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 14, Issue 2, 1996, Pages 441-446

  Sego, S ^a   Culbertson, R J ^a   Smith, David J ^a   Atzmon, Z ^a   Bair, A E ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CHEMICAL VAPOR DEPOSITION; GERMANIUM; HETEROJUNCTIONS; ION BEAMS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; STRAIN; STRAIN MEASUREMENT;

HETEROEPITAXIAL LAYERS; ION BEAM ANALYSIS; ION CHANNELING; NUCLEAR RESONANCE ION SCATTERING;

FILM GROWTH;

EID: 0030107241     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580103     Document Type: Article

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