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Volumn 83, Issue 15, 2003, Pages 3123-3125
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Quantitative measurement of the influence of growth interruptions on the Sb distribution of GaSb/GaAs quantum wells by transmission electron microscopy
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Author keywords
[No Author keywords available]
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Indexed keywords
COMPOSITION;
GROWTH (MATERIALS);
MOLECULAR BEAM EPITAXY;
SEMICONDUCTING GALLIUM COMPOUNDS;
TRANSMISSION ELECTRON MICROSCOPY;
LATTICE FRINGE ANALYSIS;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 0242272666
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1618380 Document Type: Article |
Times cited : (10)
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References (14)
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