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Volumn 201, Issue , 1999, Pages 1205-1208
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Growth of stacked GaSb/GaAs self-assembled quantum dots by molecular beam epitaxy
a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
DEPOSITION;
HETEROJUNCTIONS;
MONOLAYERS;
PHOTOLUMINESCENCE;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR QUANTUM DOTS;
WETTING;
SELF-ASSEMBLED QUANTUM DOTS;
STACKED STRUCTURES;
STRANSKI-KRASTANOW GROWTH MODE;
MOLECULAR BEAM EPITAXY;
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EID: 0032681005
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(99)00021-4 Document Type: Article |
Times cited : (26)
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References (13)
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