Intrinsic noise of a micromechanical displacement detector based on the radio-frequency single-electron transistor

Journal of Applied Physics

Volumn 91, Issue 7, 2002, Pages 4249-4255

  Zhang, Yong ^a   Blencowe, Miles P ^a  

^a DARTMOUTH COLLEGE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISPLACEMENT NOISE; FORCE SENSITIVITY; GATE VOLTAGES; INTRINSIC NOISE; INVERSE PROPORTIONS; MAGNETIC RESONANCE FORCE MICROSCOPY; MECHANICAL DISPLACEMENTS; MECHANICAL MOTIONS; MICRO-MECHANICAL; MICROMECHANICAL CANTILEVERS; NOISE ANALYSIS; NOISE SOURCE; QUALITY FACTOR Q; RADIO FREQUENCIES; TUNNELING CURRENT;

CAPACITANCE MEASUREMENT; DETECTORS; MAGNETIC FORCE MICROSCOPY; MAGNETIC RESONANCE; NANOCANTILEVERS; NATURAL FREQUENCIES; SHOT NOISE; SPECTRAL DENSITY; TRANSIENTS;

SINGLE ELECTRON TRANSISTORS;

EID: 0036536530     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1453494     Document Type: Article

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